3200MHz CL16'ya nasıl alacağım? Yani nasıl CL düşürebilirim?3200 CL16 tercih edin.
RAM'den böyle şeyler geldi.Önce thaiphoon burner dan ramlerin çipini öğrenin, daha sonra dram calculator yardımıyla çıkabileceğiniz optimal değeri bulun ve daha sonra da nasıl manuel timing ayarlayabileceğinizi öğrenip uygulayın. 3000 CL19, 3200 CL20 falan inanılmaz kötü değerler. AMD en iyi oyun deneyimi için 3600 CL16, 3733 CL17 öneriyor.
Module Manufacturer: | Kingston |
Module Part Number: | KHX3200C16D4/16GX |
Module Series: | Undefined HyperX Series |
DRAM Manufacturer: | Micron Technology |
DRAM Components: | D9ZFV (MT40A2G8JC-062E:E) |
Component Design ID: | Z32D |
DRAM Die Revision / Process Node: | E / 16 nm |
Module Manufacturing Date: | Week 47, 2020 |
Manufacturing Date Decoded: | November 16-20, 2020 |
Module Manufacturing Location: | Taiwan |
Module Serial Number: | 6DA525ACh |
Manufacturing Identification Number (Lot Number): | 0000008976805 |
Module PCB Revision: | 00h |
Fundamental Memory Class: | DDR4 SDRAM |
Module Speed Grade: | DDR4-2400T downbin |
Base Module Type: | UDIMM (133.35 mm) |
Module Capacity: | 16 GB |
Reference Raw Card: | A3 (8 layers) |
JEDEC Raw Card Designer: | SK hynix |
Module Nominal Height: | 31 < H <= 32 mm |
Module Thickness Maximum, Front: | 1 < T <= 2 mm |
Module Thickness Maximum, Back: | T <= 1 mm |
Number of DIMM Ranks: | 1 |
Address Mapping from Edge Connector to DRAM: | Standard |
DRAM Device Package: | Standard Monolithic |
DRAM Device Package Type: | 78-ball FBGA |
DRAM Device Die Count: | Single die |
Signal Loading: | Not specified |
Number of Column Addresses: | 10 bits |
Number of Row Addresses: | 17 bits |
Number of Bank Addresses: | 2 bits (4 banks) |
Bank Group Addressing: | 2 bits (4 groups) |
DRAM Device Width: | 8 bits |
Programmed DRAM Density: | 16 Gb |
Calculated DRAM Density: | 16 Gb |
Number of DRAM components: | 8 |
DRAM Page Size: | 1 KB |
Primary Memory Bus Width: | 64 bits |
Memory Bus Width Extension: | 0 bits |
DRAM Post Package Repair: | Supported |
Soft Post Package Repair: | Supported |
Fine Timebase: | 0.001 ns |
Medium Timebase: | 0.125 ns |
CAS Latencies Supported: | 10T, 11T, 12T, 13T, 14T, 15T, 16T, 17T, 18T |
Minimum Clock Cycle Time (tCK min): | 0.833 ns (1200.48 MHz) |
Maximum Clock Cycle Time (tCK max): | 1.600 ns (625.00 MHz) |
CAS# Latency Time (tAA min): | 13.750 ns |
RAS# to CAS# Delay Time (tRCD min): | 13.750 ns |
Row Precharge Delay Time (tRP min): | 13.750 ns |
Active to Precharge Delay Time (tRAS min): | 32.000 ns |
Act to Act/Refresh Delay Time (tRC min): | 45.750 ns |
Normal Refresh Recovery Delay Time (tRFC1 min): | 350.000 ns |
2x mode Refresh Recovery Delay Time (tRFC2 min): | 260.000 ns |
4x mode Refresh Recovery Delay Time (tRFC4 min): | 160.000 ns |
Short Row Active to Row Active Delay (tRRD_S min): | 3.300 ns |
Long Row Active to Row Active Delay (tRRD_L min): | 4.900 ns |
Write Recovery Time (tWR min): | 15.000 ns |
Short Write to Read Command Delay (tWTR_S min): | 2.500 ns |
Long Write to Read Command Delay (tWTR_L min): | 7.500 ns |
Long CAS to CAS Delay Time (tCCD_L min): | 5.000 ns |
Four Active Windows Delay (tFAW min): | 21.000 ns |
Maximum Active Window (tMAW): | 8192*tREFI |
Maximum Activate Count (MAC): | Unlimited MAC |
DRAM VDD 1.20 V operable/endurant: | Yes/Yes |
Supply Voltage (VDD), Min / Typical / Max: | 1.16V / 1.20V / 1.26V |
Activation Supply Voltage (VPP), Min / Typical / Max: | 2.41V / 2.50V / 2.75V |
Termination Voltage (VTT), Min / Typical / Max: | 0.565V / 0.605V / 0.640V |
Module Thermal Sensor: | Not Incorporated |
SPD Revision: | 1.1 |
SPD Bytes Total: | 512 |
SPD Bytes Used: | 384 |
SPD Checksum (Bytes 00h-7Dh): | D8E7h (OK) |
SPD Checksum (Bytes 80h-FDh): | AB72h (OK) |
JEDEC DIMM Label: | 16GB 1Rx8 PC4-2400T-UA3-11 |
Frequency | CAS | RCD | RP | RAS | RC | RRDS | RRDL | WR | WTRS | WTRL | FAW |
---|---|---|---|---|---|---|---|---|---|---|---|
1200 MHz | 18 | 17 | 17 | 39 | 55 | 4 | 6 | 18 | 3 | 9 | 26 |
1200 MHz | 17 | 17 | 17 | 39 | 55 | 4 | 6 | 18 | 3 | 9 | 26 |
1067 MHz | 16 | 15 | 15 | 35 | 49 | 4 | 6 | 16 | 3 | 8 | 23 |
1067 MHz | 15 | 15 | 15 | 35 | 49 | 4 | 6 | 16 | 3 | 8 | 23 |
933 MHz | 14 | 13 | 13 | 30 | 43 | 4 | 5 | 14 | 3 | 7 | 20 |
933 MHz | 13 | 13 | 13 | 30 | 43 | 4 | 5 | 14 | 3 | 7 | 20 |
800 MHz | 12 | 11 | 11 | 26 | 37 | 3 | 4 | 12 | 2 | 6 | 17 |
800 MHz | 11 | 11 | 11 | 26 | 37 | 3 | 4 | 12 | 2 | 6 | 17 |
667 MHz | 10 | 10 | 10 | 22 | 31 | 3 | 4 | 10 | 2 | 5 | 14 |
XMP Parameter | Profile 1 | Profile 2 |
---|---|---|
Profiles Revision: 2.0 | ||
Profile 1 (Certified) Enables: Yes | ||
Profile 2 (Extreme) Enables: Yes | ||
Profile 1 Channel Config: 2 DIMM/channel | ||
Profile 2 Channel Config: 2 DIMM/channel | ||
Speed Grade: | DDR4-3200 | DDR4-3004 |
DRAM Clock Frequency: | 1600 MHz | 1502 MHz |
Module VDD Voltage Level: | 1.35 V | 1.35 V |
Minimum DRAM Cycle Time (tCK): | 0.625 ns | 0.666 ns |
CAS Latencies Supported: | 18T,17T,16T,15T, 14T,13T,12T,11T, 10T,9T | 18T,17T,16T,15T, 14T,13T,12T,11T, 10T,9T |
CAS Latency Time (tAA): | 16T | 16T |
RAS# to CAS# Delay Time (tRCD): | 20T | 19T |
Row Precharge Delay Time (tRP): | 20T | 19T |
Active to Precharge Delay Time (tRAS): | 39T | 36T |
Active to Active/Refresh Delay Time (tRC): | 74T | 69T |
Four Activate Window Delay Time (tFAW): | 34T | 32T |
Short Activate to Activate Delay Time (tRRD_S): | 7T | 7T |
Long Activate to Activate Delay Time (tRRD_L): | 9T | 7T |
Normal Refresh Recovery Delay Time (tRFC1): | 560T | 526T |
2x mode Refresh Recovery Delay Time (tRFC2): | 416T | 391T |
4x mode Refresh Recovery Delay Time (tRFC4): | 256T | 241T |
Micron e-die D9ZFV kodlu çipler var. Böyle bir ram için fazlasıyla kaliteli bir çip. Biraz oynayarak 3600 CL16 görebilirsiniz.RAM'den böyle şeyler geldi.
Module Manufacturer: Kingston Module Part Number: KHX3200C16D4/16GX Module Series: Undefined HyperX Series DRAM Manufacturer: Micron Technology DRAM Components: D9ZFV (MT40A2G8JC-062E:E) Component Design ID: Z32D DRAM Die Revision / Process Node: E / 16 nm Module Manufacturing Date: Week 47, 2020 Manufacturing Date Decoded: November 16-20, 2020 Module Manufacturing Location: Taiwan Module Serial Number: 6DA525ACh Manufacturing Identification Number (Lot Number): 0000008976805 Module PCB Revision: 00h
Physical & Logical Attributes
Fundamental Memory Class: DDR4 SDRAM Module Speed Grade: DDR4-2400T downbin Base Module Type: UDIMM (133.35 mm) Module Capacity: 16 GB Reference Raw Card: A3 (8 layers) JEDEC Raw Card Designer: SK hynix Module Nominal Height: 31 < H <= 32 mm Module Thickness Maximum, Front: 1 < T <= 2 mm Module Thickness Maximum, Back: T <= 1 mm Number of DIMM Ranks: 1 Address Mapping from Edge Connector to DRAM: Standard DRAM Device Package: Standard Monolithic DRAM Device Package Type: 78-ball FBGA DRAM Device Die Count: Single die Signal Loading: Not specified Number of Column Addresses: 10 bits Number of Row Addresses: 17 bits Number of Bank Addresses: 2 bits (4 banks) Bank Group Addressing: 2 bits (4 groups) DRAM Device Width: 8 bits Programmed DRAM Density: 16 Gb Calculated DRAM Density: 16 Gb Number of DRAM components: 8 DRAM Page Size: 1 KB Primary Memory Bus Width: 64 bits Memory Bus Width Extension: 0 bits DRAM Post Package Repair: Supported Soft Post Package Repair: Supported
DRAM Timing Parameters
Fine Timebase: 0.001 ns Medium Timebase: 0.125 ns CAS Latencies Supported: 10T, 11T, 12T, 13T,
14T, 15T, 16T, 17T,
18TMinimum Clock Cycle Time (tCK min): 0.833 ns (1200.48 MHz) Maximum Clock Cycle Time (tCK max): 1.600 ns (625.00 MHz) CAS# Latency Time (tAA min): 13.750 ns RAS# to CAS# Delay Time (tRCD min): 13.750 ns Row Precharge Delay Time (tRP min): 13.750 ns Active to Precharge Delay Time (tRAS min): 32.000 ns Act to Act/Refresh Delay Time (tRC min): 45.750 ns Normal Refresh Recovery Delay Time (tRFC1 min): 350.000 ns 2x mode Refresh Recovery Delay Time (tRFC2 min): 260.000 ns 4x mode Refresh Recovery Delay Time (tRFC4 min): 160.000 ns Short Row Active to Row Active Delay (tRRD_S min): 3.300 ns Long Row Active to Row Active Delay (tRRD_L min): 4.900 ns Write Recovery Time (tWR min): 15.000 ns Short Write to Read Command Delay (tWTR_S min): 2.500 ns Long Write to Read Command Delay (tWTR_L min): 7.500 ns Long CAS to CAS Delay Time (tCCD_L min): 5.000 ns Four Active Windows Delay (tFAW min): 21.000 ns Maximum Active Window (tMAW): 8192*tREFI Maximum Activate Count (MAC): Unlimited MAC DRAM VDD 1.20 V operable/endurant: Yes/Yes Supply Voltage (VDD), Min / Typical / Max: 1.16V / 1.20V / 1.26V Activation Supply Voltage (VPP), Min / Typical / Max: 2.41V / 2.50V / 2.75V Termination Voltage (VTT), Min / Typical / Max: 0.565V / 0.605V / 0.640V
Thermal Parameters
Module Thermal Sensor: Not Incorporated
SPD Protocol
SPD Revision: 1.1 SPD Bytes Total: 512 SPD Bytes Used: 384 SPD Checksum (Bytes 00h-7Dh): D8E7h (OK) SPD Checksum (Bytes 80h-FDh): AB72h (OK)
Part number details
JEDEC DIMM Label: 16GB 1Rx8 PC4-2400T-UA3-11
Frequency CAS RCD RP RAS RC RRDS RRDL WR WTRS WTRL FAW 1200 MHz 18 17 17 39 55 4 6 18 3 9 26 1200 MHz 17 17 17 39 55 4 6 18 3 9 26 1067 MHz 16 15 15 35 49 4 6 16 3 8 23 1067 MHz 15 15 15 35 49 4 6 16 3 8 23 933 MHz 14 13 13 30 43 4 5 14 3 7 20 933 MHz 13 13 13 30 43 4 5 14 3 7 20 800 MHz 12 11 11 26 37 3 4 12 2 6 17 800 MHz 11 11 11 26 37 3 4 12 2 6 17 667 MHz 10 10 10 22 31 3 4 10 2 5 14
Intel Extreme Memory Profiles
XMP Parameter Profile 1 Profile 2 Profiles Revision: 2.0 Profile 1 (Certified) Enables: Yes Profile 2 (Extreme) Enables: Yes Profile 1 Channel Config: 2 DIMM/channel Profile 2 Channel Config: 2 DIMM/channel Speed Grade: DDR4-3200 DDR4-3004 DRAM Clock Frequency: 1600 MHz 1502 MHz Module VDD Voltage Level: 1.35 V 1.35 V Minimum DRAM Cycle Time (tCK): 0.625 ns 0.666 ns CAS Latencies Supported: 18T,17T,16T,15T,
14T,13T,12T,11T,
10T,9T18T,17T,16T,15T,
14T,13T,12T,11T,
10T,9TCAS Latency Time (tAA): 16T 16T RAS# to CAS# Delay Time (tRCD): 20T 19T Row Precharge Delay Time (tRP): 20T 19T Active to Precharge Delay Time (tRAS): 39T 36T Active to Active/Refresh Delay Time (tRC): 74T 69T Four Activate Window Delay Time (tFAW): 34T 32T Short Activate to Activate Delay Time (tRRD_S): 7T 7T Long Activate to Activate Delay Time (tRRD_L): 9T 7T Normal Refresh Recovery Delay Time (tRFC1): 560T 526T 2x mode Refresh Recovery Delay Time (tRFC2): 416T 391T 4x mode Refresh Recovery Delay Time (tRFC4): 256T 241T
Eki Görüntüle 1015149Eki Görüntüle 1015150
Peki nasıl yapabilirim? RAM'ler yanar mı? Voltaj ile ilgili bir şey bilmiyorum ayrıca.Micron e-die D9ZFV kodlu çipler var. Böyle bir ram için fazlasıyla kaliteli bir çip. Biraz oynayarak 3600 CL16 görebilirsiniz.
Bu konularda bilgin sıfırsa bulaşma dostum XMP ne veriyorsa onunla idare et çünkü oluşabilecek sorunları çözemezsin. Ramler yanmaz tabi kalkıp da 1.5v ve üstü vermezsen ama sistem boot etmez, siyah ekranda kalır, bios sıfırlaman gerekir o yüzden bulaşma diyorum.Peki nasıl yapabilirim? RAM'ler yanar mı? Voltaj ile ilgili bir şey bilmiyorum ayrıca.
Anakart kendisi ayarlar mı?
Tamam hocam teşekkür ederim. Gerekirse OC konusu açabilirim. Çünkü 2400MHz CL17 ile çok iyi bir verim alamıyorum.Bu konularda bilgin sıfırsa bulaşma dostum XMP ne veriyorsa onunla idare et çünkü oluşabilecek sorunları çözemezsin. Ramler yanmaz tabi kalkıp da 1.5v ve üstü vermezsen ama sistem boot etmez, siyah ekranda kalır, bios sıfırlaman gerekir o yüzden bulaşma diyorum.