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Module Manufacturer: | Kingston |
Module Part Number: | KHX3200C16D4/16GX |
Module Series: | Undefined HyperX Series |
DRAM Manufacturer: | Micron Technology |
DRAM Components: | D9ZFV (MT40A2G8JC-062E:E) |
Component Design ID: | Z32D |
DRAM Die Revision / Process Node: | E / 16 nm |
Module Manufacturing Date: | Week 47, 2020 |
Manufacturing Date Decoded: | November 16-20, 2020 |
Module Manufacturing Location: | Taiwan |
Module Serial Number: | 6DA525ACh |
Manufacturing Identification Number (Lot Number): | 0000008976805 |
Module PCB Revision: | 00h |
Physical & Logical Attributes
Fundamental Memory Class: | DDR4 SDRAM |
Module Speed Grade: | DDR4-2400T downbin |
Base Module Type: | UDIMM (133.35 mm) |
Module Capacity: | 16 GB |
Reference Raw Card: | A3 (8 layers) |
JEDEC Raw Card Designer: | SK hynix |
Module Nominal Height: | 31 < H <= 32 mm |
Module Thickness Maximum, Front: | 1 < T <= 2 mm |
Module Thickness Maximum, Back: | T <= 1 mm |
Number of DIMM Ranks: | 1 |
Address Mapping from Edge Connector to DRAM: | Standard |
DRAM Device Package: | Standard Monolithic |
DRAM Device Package Type: | 78-ball FBGA |
DRAM Device Die Count: | Single die |
Signal Loading: | Not specified |
Number of Column Addresses: | 10 bits |
Number of Row Addresses: | 17 bits |
Number of Bank Addresses: | 2 bits (4 banks) |
Bank Group Addressing: | 2 bits (4 groups) |
DRAM Device Width: | 8 bits |
Programmed DRAM Density: | 16 Gb |
Calculated DRAM Density: | 16 Gb |
Number of DRAM components: | 8 |
DRAM Page Size: | 1 KB |
Primary Memory Bus Width: | 64 bits |
Memory Bus Width Extension: | 0 bits |
DRAM Post Package Repair: | Supported |
Soft Post Package Repair: | Supported |
DRAM Timing Parameters
Fine Timebase: | 0.001 ns |
Medium Timebase: | 0.125 ns |
CAS Latencies Supported: | 10T, 11T, 12T, 13T,
14T, 15T, 16T, 17T,
18T |
Minimum Clock Cycle Time (tCK min): | 0.833 ns (1200.48 MHz) |
Maximum Clock Cycle Time (tCK max): | 1.600 ns (625.00 MHz) |
CAS# Latency Time (tAA min): | 13.750 ns |
RAS# to CAS# Delay Time (tRCD min): | 13.750 ns |
Row Precharge Delay Time (tRP min): | 13.750 ns |
Active to Precharge Delay Time (tRAS min): | 32.000 ns |
Act to Act/Refresh Delay Time (tRC min): | 45.750 ns |
Normal Refresh Recovery Delay Time (tRFC1 min): | 350.000 ns |
2x mode Refresh Recovery Delay Time (tRFC2 min): | 260.000 ns |
4x mode Refresh Recovery Delay Time (tRFC4 min): | 160.000 ns |
Short Row Active to Row Active Delay (tRRD_S min): | 3.300 ns |
Long Row Active to Row Active Delay (tRRD_L min): | 4.900 ns |
Write Recovery Time (tWR min): | 15.000 ns |
Short Write to Read Command Delay (tWTR_S min): | 2.500 ns |
Long Write to Read Command Delay (tWTR_L min): | 7.500 ns |
Long CAS to CAS Delay Time (tCCD_L min): | 5.000 ns |
Four Active Windows Delay (tFAW min): | 21.000 ns |
Maximum Active Window (tMAW): | 8192*tREFI |
Maximum Activate Count (MAC): | Unlimited MAC |
DRAM VDD 1.20 V operable/endurant: | Yes/Yes |
Supply Voltage (VDD), Min / Typical / Max: | 1.16V / 1.20V / 1.26V |
Activation Supply Voltage (VPP), Min / Typical / Max: | 2.41V / 2.50V / 2.75V |
Termination Voltage (VTT), Min / Typical / Max: | 0.565V / 0.605V / 0.640V |
Thermal Parameters
Module Thermal Sensor: | Not Incorporated |
SPD Protocol
SPD Revision: | 1.1 |
SPD Bytes Total: | 512 |
SPD Bytes Used: | 384 |
SPD Checksum (Bytes 00h-7Dh): | D8E7h (OK) |
SPD Checksum (Bytes 80h-FDh): | AB72h (OK) |
Part number details
JEDEC DIMM Label: | 16GB 1Rx8 PC4-2400T-UA3-11 |
Frequency | CAS | RCD | RP | RAS | RC | RRDS | RRDL | WR | WTRS | WTRL | FAW |
---|
1200 MHz | 18 | 17 | 17 | 39 | 55 | 4 | 6 | 18 | 3 | 9 | 26 |
1200 MHz | 17 | 17 | 17 | 39 | 55 | 4 | 6 | 18 | 3 | 9 | 26 |
1067 MHz | 16 | 15 | 15 | 35 | 49 | 4 | 6 | 16 | 3 | 8 | 23 |
1067 MHz | 15 | 15 | 15 | 35 | 49 | 4 | 6 | 16 | 3 | 8 | 23 |
933 MHz | 14 | 13 | 13 | 30 | 43 | 4 | 5 | 14 | 3 | 7 | 20 |
933 MHz | 13 | 13 | 13 | 30 | 43 | 4 | 5 | 14 | 3 | 7 | 20 |
800 MHz | 12 | 11 | 11 | 26 | 37 | 3 | 4 | 12 | 2 | 6 | 17 |
800 MHz | 11 | 11 | 11 | 26 | 37 | 3 | 4 | 12 | 2 | 6 | 17 |
667 MHz | 10 | 10 | 10 | 22 | 31 | 3 | 4 | 10 | 2 | 5 | 14 |
Intel Extreme Memory Profiles
XMP Parameter | Profile 1 | Profile 2 |
---|
Profiles Revision: 2.0 | | |
Profile 1 (Certified) Enables: Yes | | |
Profile 2 (Extreme) Enables: Yes | | |
Profile 1 Channel Config: 2 DIMM/channel | | |
Profile 2 Channel Config: 2 DIMM/channel | | |
Speed Grade: | DDR4-3200 | DDR4-3004 |
DRAM Clock Frequency: | 1600 MHz | 1502 MHz |
Module VDD Voltage Level: | 1.35 V | 1.35 V |
Minimum DRAM Cycle Time (tCK): | 0.625 ns | 0.666 ns |
CAS Latencies Supported: | 18T,17T,16T,15T,
14T,13T,12T,11T,
10T,9T | 18T,17T,16T,15T,
14T,13T,12T,11T,
10T,9T |
CAS Latency Time (tAA): | 16T | 16T |
RAS# to CAS# Delay Time (tRCD): | 20T | 19T |
Row Precharge Delay Time (tRP): | 20T | 19T |
Active to Precharge Delay Time (tRAS): | 39T | 36T |
Active to Active/Refresh Delay Time (tRC): | 74T | 69T |
Four Activate Window Delay Time (tFAW): | 34T | 32T |
Short Activate to Activate Delay Time (tRRD_S): | 7T | 7T |
Long Activate to Activate Delay Time (tRRD_L): | 9T | 7T |
Normal Refresh Recovery Delay Time (tRFC1): | 560T | 526T |
2x mode Refresh Recovery Delay Time (tRFC2): | 416T | 391T |
4x mode Refresh Recovery Delay Time (tRFC4): | 256T | 241T |
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