RAM'den böyle şeyler geldi.
| Module Manufacturer: | Kingston |
| Module Part Number: | KHX3200C16D4/16GX |
| Module Series: | Undefined HyperX Series |
| DRAM Manufacturer: | Micron Technology |
| DRAM Components: | D9ZFV (MT40A2G8JC-062E:E) |
| Component Design ID: | Z32D |
| DRAM Die Revision / Process Node: | E / 16 nm |
| Module Manufacturing Date: | Week 47, 2020 |
| Manufacturing Date Decoded: | November 16-20, 2020 |
| Module Manufacturing Location: | Taiwan |
| Module Serial Number: | 6DA525ACh |
| Manufacturing Identification Number (Lot Number): | 0000008976805 |
| Module PCB Revision: | 00h |
Physical & Logical Attributes
| Fundamental Memory Class: | DDR4 SDRAM |
| Module Speed Grade: | DDR4-2400T downbin |
| Base Module Type: | UDIMM (133.35 mm) |
| Module Capacity: | 16 GB |
| Reference Raw Card: | A3 (8 layers) |
| JEDEC Raw Card Designer: | SK hynix |
| Module Nominal Height: | 31 < H <= 32 mm |
| Module Thickness Maximum, Front: | 1 < T <= 2 mm |
| Module Thickness Maximum, Back: | T <= 1 mm |
| Number of DIMM Ranks: | 1 |
| Address Mapping from Edge Connector to DRAM: | Standard |
| DRAM Device Package: | Standard Monolithic |
| DRAM Device Package Type: | 78-ball FBGA |
| DRAM Device Die Count: | Single die |
| Signal Loading: | Not specified |
| Number of Column Addresses: | 10 bits |
| Number of Row Addresses: | 17 bits |
| Number of Bank Addresses: | 2 bits (4 banks) |
| Bank Group Addressing: | 2 bits (4 groups) |
| DRAM Device Width: | 8 bits |
| Programmed DRAM Density: | 16 Gb |
| Calculated DRAM Density: | 16 Gb |
| Number of DRAM components: | 8 |
| DRAM Page Size: | 1 KB |
| Primary Memory Bus Width: | 64 bits |
| Memory Bus Width Extension: | 0 bits |
| DRAM Post Package Repair: | Supported |
| Soft Post Package Repair: | Supported |
DRAM Timing Parameters
| Fine Timebase: | 0.001 ns |
| Medium Timebase: | 0.125 ns |
| CAS Latencies Supported: | 10T, 11T, 12T, 13T,
14T, 15T, 16T, 17T,
18T |
| Minimum Clock Cycle Time (tCK min): | 0.833 ns (1200.48 MHz) |
| Maximum Clock Cycle Time (tCK max): | 1.600 ns (625.00 MHz) |
| CAS# Latency Time (tAA min): | 13.750 ns |
| RAS# to CAS# Delay Time (tRCD min): | 13.750 ns |
| Row Precharge Delay Time (tRP min): | 13.750 ns |
| Active to Precharge Delay Time (tRAS min): | 32.000 ns |
| Act to Act/Refresh Delay Time (tRC min): | 45.750 ns |
| Normal Refresh Recovery Delay Time (tRFC1 min): | 350.000 ns |
| 2x mode Refresh Recovery Delay Time (tRFC2 min): | 260.000 ns |
| 4x mode Refresh Recovery Delay Time (tRFC4 min): | 160.000 ns |
| Short Row Active to Row Active Delay (tRRD_S min): | 3.300 ns |
| Long Row Active to Row Active Delay (tRRD_L min): | 4.900 ns |
| Write Recovery Time (tWR min): | 15.000 ns |
| Short Write to Read Command Delay (tWTR_S min): | 2.500 ns |
| Long Write to Read Command Delay (tWTR_L min): | 7.500 ns |
| Long CAS to CAS Delay Time (tCCD_L min): | 5.000 ns |
| Four Active Windows Delay (tFAW min): | 21.000 ns |
| Maximum Active Window (tMAW): | 8192*tREFI |
| Maximum Activate Count (MAC): | Unlimited MAC |
| DRAM VDD 1.20 V operable/endurant: | Yes/Yes |
| Supply Voltage (VDD), Min / Typical / Max: | 1.16V / 1.20V / 1.26V |
| Activation Supply Voltage (VPP), Min / Typical / Max: | 2.41V / 2.50V / 2.75V |
| Termination Voltage (VTT), Min / Typical / Max: | 0.565V / 0.605V / 0.640V |
Thermal Parameters
| Module Thermal Sensor: | Not Incorporated |
SPD Protocol
| SPD Revision: | 1.1 |
| SPD Bytes Total: | 512 |
| SPD Bytes Used: | 384 |
| SPD Checksum (Bytes 00h-7Dh): | D8E7h (OK) |
| SPD Checksum (Bytes 80h-FDh): | AB72h (OK) |
Part number details
| JEDEC DIMM Label: | 16GB 1Rx8 PC4-2400T-UA3-11 |
| Frequency | CAS | RCD | RP | RAS | RC | RRDS | RRDL | WR | WTRS | WTRL | FAW |
|---|
| 1200 MHz | 18 | 17 | 17 | 39 | 55 | 4 | 6 | 18 | 3 | 9 | 26 |
| 1200 MHz | 17 | 17 | 17 | 39 | 55 | 4 | 6 | 18 | 3 | 9 | 26 |
| 1067 MHz | 16 | 15 | 15 | 35 | 49 | 4 | 6 | 16 | 3 | 8 | 23 |
| 1067 MHz | 15 | 15 | 15 | 35 | 49 | 4 | 6 | 16 | 3 | 8 | 23 |
| 933 MHz | 14 | 13 | 13 | 30 | 43 | 4 | 5 | 14 | 3 | 7 | 20 |
| 933 MHz | 13 | 13 | 13 | 30 | 43 | 4 | 5 | 14 | 3 | 7 | 20 |
| 800 MHz | 12 | 11 | 11 | 26 | 37 | 3 | 4 | 12 | 2 | 6 | 17 |
| 800 MHz | 11 | 11 | 11 | 26 | 37 | 3 | 4 | 12 | 2 | 6 | 17 |
| 667 MHz | 10 | 10 | 10 | 22 | 31 | 3 | 4 | 10 | 2 | 5 | 14 |
Intel Extreme Memory Profiles
| XMP Parameter | Profile 1 | Profile 2 |
|---|
| Profiles Revision: 2.0 | | |
| Profile 1 (Certified) Enables: Yes | | |
| Profile 2 (Extreme) Enables: Yes | | |
| Profile 1 Channel Config: 2 DIMM/channel | | |
| Profile 2 Channel Config: 2 DIMM/channel | | |
| Speed Grade: | DDR4-3200 | DDR4-3004 |
| DRAM Clock Frequency: | 1600 MHz | 1502 MHz |
| Module VDD Voltage Level: | 1.35 V | 1.35 V |
| Minimum DRAM Cycle Time (tCK): | 0.625 ns | 0.666 ns |
| CAS Latencies Supported: | 18T,17T,16T,15T,
14T,13T,12T,11T,
10T,9T | 18T,17T,16T,15T,
14T,13T,12T,11T,
10T,9T |
| CAS Latency Time (tAA): | 16T | 16T |
| RAS# to CAS# Delay Time (tRCD): | 20T | 19T |
| Row Precharge Delay Time (tRP): | 20T | 19T |
| Active to Precharge Delay Time (tRAS): | 39T | 36T |
| Active to Active/Refresh Delay Time (tRC): | 74T | 69T |
| Four Activate Window Delay Time (tFAW): | 34T | 32T |
| Short Activate to Activate Delay Time (tRRD_S): | 7T | 7T |
| Long Activate to Activate Delay Time (tRRD_L): | 9T | 7T |
| Normal Refresh Recovery Delay Time (tRFC1): | 560T | 526T |
| 2x mode Refresh Recovery Delay Time (tRFC2): | 416T | 391T |
| 4x mode Refresh Recovery Delay Time (tRFC4): | 256T | 241T |
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