shadymeowy
Kilopat
- Katılım
- 26 Kasım 2015
- Mesajlar
- 9
Daha fazla
- Cinsiyet
- Erkek
Şimdi benim elimde HP 250 G3 K7j62ES var. Geçenlerde HP hiçbir yerde belirtmediği için kaç RAM slotu var diye açıp baktım. Halihazırda 4 GB'lık bir RAM'ım var. Ekstradan 4 GB daha eklemek istiyorum. Bir yerde RAM'ın aynı modelini buldum, 11-12-b4 ve 11-13-b4 olmak üzere iki seçenek var. Ama cas değeriymiş rrcd imiş bir fikrim yok ne ne kadar olacak. Bir de HP 8 GB maksimum dediği için 4 GB eklemeye karar verdim ama nereden baksam 16 GB görünüyor maksimum. Bu konuda da emin olamadım aslında. 8 GB ekleyip 12 GB yapmak daha mı mantıklı olur? Teşekkürler.
Almayı düşündüğüm ürün: n11
Decode-dimmsden aldığım çıktı:
Memory serial presence detect decoder.
by philip edelbrock, christian zuckschwerdt, burkart lingner,
Jean delvare, trent piepho and others.
Decoding eeprom: /sys/bus/i2c/drivers/eeprom/0-0052.
Guessing DIMM is in bank 3.
---=== SPD eeprom ınformation ===---
Eeprom CRC of bytes 0-116 ok (0xE68A)
# Of bytes written to SDRAM eeprom 176.
Total number of bytes in eeprom 256.
Fundamental Memory type DDR3 SDRAM.
Module type SO-DIMM.
---=== Memory characteristics ===---
Maximum module Speed 1600 MHz (PC3-12800)
Size 4096 MB.
Banks X rows X columns X bits 8 X 16 X 10 X 64.
Ranks 1.
SDRAM device width 8 bits.
Bus width extension 0 bits.
Tcl-trcd-trp-tras 11-11-11-28.
Supported cas latencies (tcl) 11T, 10T, 9t, 8t, 7t, 6t, 5T.
---=== Timings at standard speeds ===---
Tcl-trcd-trp-tras as DDR3-1600 11-11-11-28.
Tcl-trcd-trp-tras as DDR3-1333 9-9-9-24.
Tcl-trcd-trp-tras as DDR3-1066 7-7-7-19.
Tcl-trcd-trp-tras as DDR3-800 6-6-6-14.
---=== Timing parameters ===---
Minimum cycle time (tck) 1.250 NS.
Minimum cas latency time (taa) 13.125 NS.
Minimum write Recovery time (twr) 15.000 NS.
Minimum ras# to cas# delay (trcd) 13.125 NS.
Minimum row active to row active delay (trrd) 6.000 NS.
Minimum row precharge delay (trp) 13.125 NS.
Minimum active to precharge delay (tras) 35.000 NS.
Minimum active to Auto-refresh delay (trc) 48.125 NS.
Minimum Recovery delay (trfc) 260.000 NS.
Minimum write to read CMD delay (twtr) 7.500 NS.
Minimum read to pre-charge CMD delay (trtp) 7.500 NS.
Minimum four activate window delay (tfaw) 30.000 NS.
---=== Optional features ===---
Operable voltages 1.5v, 1.35V
RZQ/6 supported? Yes.
RZQ/7 supported? Yes.
DLL-off mode supported? Yes.
Operating temperature range 0-95 degrees c.
Refresh rate in extended temp range 2X.
Auto self-refresh? No.
On-die thermal sensor readout? No.
Partial array self-refresh? No.
Module thermal sensor no.
SDRAM device type standard monolithic.
---=== Physical characteristics ===---
Module height 30 mm.
Module thickness 2 mm front, 2 mm back.
Module width 67.6 mm.
Module reference card b revision 1.
Rank 1 mapping standard.
---=== Manufacturer data ===---
Module manufacturer SK Hynix (former hyundai electronics)
DRAM manufacturer SK Hynix (former hyundai electronics)
Manufacturing location code 0x01.
Manufacturing date 2014-W53.
Assembly serial number 0x13663811.
Part number HMT451S6BFR8A-PB
Revision code 0x4E30.
Number of SDRAM dımms detected and decoded: 1
Almayı düşündüğüm ürün: n11
Decode-dimmsden aldığım çıktı:
Memory serial presence detect decoder.
by philip edelbrock, christian zuckschwerdt, burkart lingner,
Jean delvare, trent piepho and others.
Decoding eeprom: /sys/bus/i2c/drivers/eeprom/0-0052.
Guessing DIMM is in bank 3.
---=== SPD eeprom ınformation ===---
Eeprom CRC of bytes 0-116 ok (0xE68A)
# Of bytes written to SDRAM eeprom 176.
Total number of bytes in eeprom 256.
Fundamental Memory type DDR3 SDRAM.
Module type SO-DIMM.
---=== Memory characteristics ===---
Maximum module Speed 1600 MHz (PC3-12800)
Size 4096 MB.
Banks X rows X columns X bits 8 X 16 X 10 X 64.
Ranks 1.
SDRAM device width 8 bits.
Bus width extension 0 bits.
Tcl-trcd-trp-tras 11-11-11-28.
Supported cas latencies (tcl) 11T, 10T, 9t, 8t, 7t, 6t, 5T.
---=== Timings at standard speeds ===---
Tcl-trcd-trp-tras as DDR3-1600 11-11-11-28.
Tcl-trcd-trp-tras as DDR3-1333 9-9-9-24.
Tcl-trcd-trp-tras as DDR3-1066 7-7-7-19.
Tcl-trcd-trp-tras as DDR3-800 6-6-6-14.
---=== Timing parameters ===---
Minimum cycle time (tck) 1.250 NS.
Minimum cas latency time (taa) 13.125 NS.
Minimum write Recovery time (twr) 15.000 NS.
Minimum ras# to cas# delay (trcd) 13.125 NS.
Minimum row active to row active delay (trrd) 6.000 NS.
Minimum row precharge delay (trp) 13.125 NS.
Minimum active to precharge delay (tras) 35.000 NS.
Minimum active to Auto-refresh delay (trc) 48.125 NS.
Minimum Recovery delay (trfc) 260.000 NS.
Minimum write to read CMD delay (twtr) 7.500 NS.
Minimum read to pre-charge CMD delay (trtp) 7.500 NS.
Minimum four activate window delay (tfaw) 30.000 NS.
---=== Optional features ===---
Operable voltages 1.5v, 1.35V
RZQ/6 supported? Yes.
RZQ/7 supported? Yes.
DLL-off mode supported? Yes.
Operating temperature range 0-95 degrees c.
Refresh rate in extended temp range 2X.
Auto self-refresh? No.
On-die thermal sensor readout? No.
Partial array self-refresh? No.
Module thermal sensor no.
SDRAM device type standard monolithic.
---=== Physical characteristics ===---
Module height 30 mm.
Module thickness 2 mm front, 2 mm back.
Module width 67.6 mm.
Module reference card b revision 1.
Rank 1 mapping standard.
---=== Manufacturer data ===---
Module manufacturer SK Hynix (former hyundai electronics)
DRAM manufacturer SK Hynix (former hyundai electronics)
Manufacturing location code 0x01.
Manufacturing date 2014-W53.
Assembly serial number 0x13663811.
Part number HMT451S6BFR8A-PB
Revision code 0x4E30.
Number of SDRAM dımms detected and decoded: 1